Fortification of charge-storing material in high-k dielectric environments and resulting appratuses

ABSTRACT

Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel dielectric and a protective film over the nanodots. In another memory cell, the charge storage node includes nanodots that include a ruthenium alloy. Memory cells can include an inter-gate dielectric over the protective film or ruthenium alloy nanodots and a control gate over the inter-gate dielectric. The protective film and ruthenium alloy can be configured to protect at least some of the nanodots from vaporizing during formation of the inter-gate dielectric.

TECHNICAL FIELD

The present disclosure relates generally to integrated circuit devices,and more particularly, to forming charge-storing structures insemiconductor devices.

BACKGROUND

Integrated circuits are interconnected networks of electrical componentsfabricated on a common foundation called a substrate. The electricalcomponents are typically fabricated on a wafer of semiconductor materialthat serves as a substrate. Various fabrication techniques, such aslayering, doping, masking, and etching, are used to build millions ofresistors, transistors, and other electrical components on the wafer.The components are then wired together, (i.e., interconnected) to definea specific electrical circuit, such as a processor or a memory device.

There is a general desire to reduce the sizes of the various componentsin integrated circuit fabrication. Reducing size is generallyaccompanied by a reduction in cost, as more and more devices can befabricated on a single substrate, and a reduction in power requirements,as less power is needed to switch smaller components. However, this sizereduction does not come without a cost. As integrated circuit devicesbecome smaller and smaller, charge leakage and parasitic capacitancebetween components become increasingly problematic. An example of thedetrimental impact of charge leakage and parasitic capacitance can beseen in flash memory devices.

Flash memory devices are one particular class of memory devices thathave developed into a popular source of non-volatile memory for a widerange of electronic applications. Non-volatile memory is memory that canretain its data for some extended period without the application ofpower. Flash memory devices typically use a one-transistor memory cellthat allows for high memory densities, high reliability, and low powerconsumption. Changes in threshold voltage of the cells, throughprogramming of a charge storage node, such as a floating gate, trappinglayers, or other physical phenomena, determine the data state of eachcell. By defining two or more ranges of threshold voltages to eachcorrespond to individual data states, one or more bits of informationmay be stored in each cell. Common uses for flash memory and othernon-volatile memory include personal computers, personal digitalassistants (PDAs), digital cameras, digital media players, digitalrecorders, games, appliances, vehicles, wireless devices, mobiletelephones, and removable memory modules. The uses for non-volatilememory continue to expand to cover more devices and larger amounts ofmemory.

For a flash memory device utilizing floating-gate memory cells, where alevel of charge stored on the floating-gate affects its thresholdvoltage, a reduction in size means less volume for charge storage. Ifthe same material were used for the floating gates of two differentlysized memory cells, the smaller memory cell would be capable of storingless charge. As a result, the smaller memory cell will have a smallerdifference in its possible threshold voltages relative to the largermemory cell. Furthermore, any charge leakage, such as stress-inducedgate leakage, would have a larger impact on the threshold voltage of thesmaller memory cell. In addition, due to parasitic capacitive couplingto floating gates of adjacent memory cells, more margin may be requiredto avoid a false reading of the data state of the memory cell.Compensating for leakage and parasitic capacitance concerns with asmaller range of threshold voltages makes it increasingly difficult todistinguish between differing data states of smaller memory cells.

The inventors have appreciated that for the reasons stated above, andfor other reasons that will become apparent to those skilled in the artupon reading and understanding the present specification, there is aneed in the art for alternative structures and their processes in theformation of integrated circuit devices.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, which illustrate embodiments of the invention:

FIG. 1 is a simplified block diagram of a memory device coupled to aprocessor as part of an electronic system, according to an embodiment ofthe disclosure;

FIG. 2 is a simplified schematic of a NAND memory array as might befound in the memory array of FIG. 1;

FIG. 3 is a simplified schematic of a NOR memory array as might be foundin the memory array of FIG. 1;

FIGS. 4A-4D are simplified cross-sectional views at various processsteps during formation of a memory cell 400 in accordance with one ormore embodiments of the disclosure;

FIGS. 5A-5B are simplified plan views of nanodots of a charge storagenode before and after, respectively, a process of forming high-kdielectric material over the nanodots;

FIGS. 6A-6D depict conceptually an atomic layer deposition process inaccordance with an embodiment of the disclosure;

FIG. 7 is a simplified flow diagram showing acts involved in forming aprotective film over nanodots; and

FIG. 8 is a simplified flow diagram showing acts involved in forminginter-gate dielectric including high-k dielectric material.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, and in which is shown byway of illustration specific embodiments in which the invention may bepracticed. These embodiments are described in sufficient detail toenable those of ordinary skill in the art to practice the invention, andit is to be understood that other embodiments may be utilized, and thatprocess, chemical, structural, logical, and electrical changes may bemade within the scope of the present invention.

In this description, circuits and functions may be shown in blockdiagram form in order not to obscure the present invention inunnecessary detail. Furthermore, specific circuit implementations shownand described are only examples and should not be construed as the onlyway to implement the present invention unless specified otherwiseherein. Block definitions and partitioning of logic between variousblocks represent a specific implementation. It will be readily apparentto one of ordinary skill in the art that the present invention may bepracticed by numerous other partitioning solutions. For the most part,details concerning timing considerations and the like have been omittedwhere such details are not necessary to obtain a complete understandingof the present invention and are within the abilities of persons ofordinary skill in the relevant art.

Some drawings may illustrate signals as a single signal for clarity ofpresentation and description. It will be understood by a person ofordinary skill in the art that the signal may represent a bus ofsignals, wherein the bus may have a variety of bit widths and thepresent invention may be implemented on any number of data signalsincluding a single data signal.

The terms “wafer” and “substrate” are to be understood as asemiconductor-based material including silicon, silicon-on-insulator(SOI) or silicon-on-sapphire (SOS) technology, thin film transistor(TFT) technology, doped and undoped semiconductors, epitaxial layers ofsilicon supported by a base semiconductor foundation, and othersemiconductor structures. Furthermore, when reference is made to a“wafer” or “substrate” in the following description, previous processsteps may have been utilized to form regions or junctions in or over thebase semiconductor structure or foundation. The semiconductor need notbe silicon-based, but may be based on silicon-germanium,silicon-on-insulator, silicon-on-sapphire, germanium, or galliumarsenide, among others. In addition, directional references, e.g.,upper, lower, top, bottom and sides, are relative to one another andneed not refer to an absolute direction.

It should be understood that any reference to an element herein using adesignation such as “first,” “second,” and so forth does not limit thequantity or order of those elements, unless such limitation isexplicitly stated. Rather, these designations may be used herein as aconvenient method of distinguishing between two or more elements orinstances of an element. Thus, a reference to first and second elementsdoes not mean that only two elements may be employed there or that thefirst element must precede the second element in some manner. Also,unless stated otherwise a set of elements may comprise one or moreelements.

Also, it is noted that the embodiments may be described in terms of aprocess that is depicted as a flowchart, a flow diagram, a structurediagram, or a block diagram. Although a flowchart may describeoperational acts as a sequential process, many of these acts can beperformed in another sequence, in parallel, or substantiallyconcurrently. In addition, the order of the acts may be re-arranged. Aprocess is terminated when its acts are completed.

FIG. 1 is a simplified block diagram of a memory device 100, as oneexample of an integrated circuit device, in communication with (e.g.,coupled to) a memory access device 130 as part of an electronic system,according to an embodiment of the disclosure. Some examples ofelectronic systems include personal computers, personal digitalassistants (PDAs), digital cameras, digital media players, digitalrecorders, games, appliances, vehicles, wireless devices, cellulartelephones, and the like. The memory access device 130 may be any deviceconfigured for accessing the memory device, such as, for example amemory controller or processor.

The memory device 100 includes an array of memory cells 104 arranged inrows and columns. The memory device 100, memory access device 130, or acombination thereof can include charge-storage structures formed inaccordance with an embodiment of this disclosure. In a non-volatilememory embodiment, the array of memory cells 104 may include memorycells having a charge storage node in accordance with an embodiment ofthis disclosure. Although various embodiments will be describedprimarily with reference to NAND memory arrays, the various embodimentsare not limited to a specific architecture of the memory array 104. Someexamples of other array architectures suitable for the presentembodiments include NOR arrays, AND arrays, and virtual ground arrays.

A row decode circuitry 108 and a column decode circuitry 110 areprovided to decode address signals. Address signals are received anddecoded to access the memory array 104. The memory device 100 alsoincludes input/output (I/O) control circuitry 112 to manage input ofcommands, addresses, and data to the memory device 100 as well as outputof data and status information from the memory device 100. An addressregister 114 is coupled between the I/O control circuitry 112 and therow decode circuitry 108 and the column decode circuitry 110 and maylatch the address signals prior to decoding. A command register 124 iscoupled between the I/O control circuitry 112 and control logic 116 tolatch incoming commands. The control logic 116 controls access to thememory array 104 in response to the commands and generates statusinformation for the memory access device 130. The control logic 116controls the row decode circuitry 108 and the column decode circuitry110 in response to values of the command register 132 and values of acontrol link 132.

Control logic 116 may be coupled to a cache register 118. The cacheregister 118 latches data, either incoming or outgoing, as directed bythe control logic 116 to temporarily store data while the memory array104 is busy writing or reading, respectively, other data. During a writeoperation, data is passed from the cache register 118 to a data register120 for transfer to the memory array 104. New data may be latched in thecache register 118 from the I/O control circuitry 112. During a readoperation, new data may be passed from the data register 120 to thecache register 118. The new data then may be passed from the cacheregister 118 to the I/0 control circuitry 112 for output to the memoryaccess device 130. The. A status register 122 is coupled between the I/Ocontrol circuitry 112 and the control logic 116 to latch statusinformation for output to the memory access device 130.

The memory device 100 receives control signals at the control logic 116from the memory access device 130 over the control link 132. Asnon-limiting examples, the control signals may include a chip enableCE#, a command latch enable CLE, an address latch enable ALE, and awrite enable WE#. The memory device 100 receives commands (in the formof command signals), addresses (in the form of address signals), anddata (in the form of data signals) from the memory access device 130over a multiplexed I/O bus 134 and outputs data to the memory accessdevice 130 over the I/O bus 134.

Specifically, the commands may be received over I/O pins [7:0] of theI/O bus 134 at the I/O control circuitry 112 and are written into thecommand register 124. The addresses may be received I/O pins [7:0] ofthe I/O bus 134 at the I/O control circuitry 112 and are written intothe address register 114. The data may be received over I/O pins [7:0]for an 8-bit device or I/O pins [15:0] for a 16-bit device at the I/Ocontrol circuitry 112 and are written into the cache register 118. Thedata are subsequently written into the data register 120 for programmingthe memory array 104. For another embodiment, the cache register 118 maybe omitted, and the data may be written directly into the data register120. Also, data may be output over I/O pins [7:0] for an 8-bit device orI/O pins [15:0] for a 16-bit device. It will be appreciated by thoseskilled in the art that additional circuitry and signals can be providedand that the memory device 100 of FIG. 1 has been simplified to helpfocus on the present disclosure.

While FIG. 1 has been described in accordance with popular conventionsfor receipt and output of the various signals, it is noted that thevarious embodiments are not limited by the specific signals and I/Oconfigurations described unless expressly noted herein.

FIG. 2 is a schematic of a NAND memory array 200 as might be found inthe memory array 104 of FIG. 1 in accordance with another embodiment ofthe disclosure. As shown in FIG. 2, the NAND memory array 200 includesaccess lines, (e.g., word lines) 202 ₁ to 202 _(N) and intersectingdigit lines (e.g., bit lines) 204 ₁ to 204 _(M). For ease of addressingin the digital environment, the number of access lines 202 and thenumber of digit lines 204 typically are each some power of two.

The NAND memory array 200 includes NAND strings 206 k to 206M. Each NANDstring includes charge-storage transistors 208 ₁ to 208 _(N). Thecharge-storage transistors 208 represent non-volatile memory cells forstorage of data. The charge-storage transistors 208 of each NAND string206 are connected in series source to drain between a source select gate210 (e.g., a field-effect transistor (FET)), and a drain select gate 212(e.g., an FET).

A source of each source select gate 210 is connected to a common sourceline 216. The drain of each source select gate 210 is connected to thesource of the first charge-storage transistor 208 of the correspondingNAND string 206. For example, the drain of source select gate 210 ₁ isconnected to the source of transistor 208 ₁ of the corresponding NANDstring 206 ₁. A control gate 220 of each source select gate 210 isconnected to source select line 214. If multiple source select gates 210are utilized for a given NAND string 206, they could be coupled inseries between the common source line 216 and the first charge-storagetransistor 208 of that NAND string 206.

The drain of each drain select gate 212 is connected to a digit line 204for the corresponding NAND string at a drain contact 228. For example,the drain of drain select gate 212 ₁ is connected to the bit line 204 ₁for the corresponding NAND string 206 ₁ at drain contact 228 ₁. Thesource of each drain select gate 212 is connected to the drain of thelast charge-storage transistor 208 of the corresponding NAND string 206.For example, the source of drain select gate 212 ₁ is connected to thedrain of transistor 208 _(N) of the corresponding NAND string 206 ₁. Ifmultiple drain select gates 212 are utilized for a given NAND string206, they could be coupled in series between the corresponding digitline 204 and the last floating-gate transistor 208 _(N) of that NANDstring 206.

Typical construction of charge-storage transistors 208 includes a source230 and a drain 232, a charge storage node 234, and a control gate 236,as shown in FIG. 2. The charge-storage transistors 208 can be formed inaccordance with one or more of the various embodiments discussed herein.Charge-storage transistors 208 have the control gates 236 coupled to anaccess line 202. A column of the charge-storage transistors 208 arethose NAND strings 206 coupled to a given local digit line 204. A row ofthe charge-storage transistors 208 are those transistors commonlycoupled to a given access line 202.

FIG. 3 is a schematic of a NOR memory array 300 as might be found in thememory array 104 of FIG. 1 in accordance with another embodiment of thedisclosure. The NOR memory array 300 includes access lines (e.g., wordlines) 302 ₁ to 302 _(P) and intersecting local digit lines 304 ₁ to 304_(Q). For ease of addressing in the digital environment, the number ofaccess lines 302 and the number of digit lines 304 typically are eachsome power of two. The local digit lines 304 are coupled to global digitlines (not shown) in a many-to-one relationship, such as a wire-orconfiguration.

Charge-storage transistors 308 are located at each intersection of anaccess line 302 and a local digit line 304. The charge-storagetransistors 308 represent non-volatile memory cells for storage of data.Construction of charge-storage transistors 308 includes a source 310 anda drain 312, a charge-storage node 314, and a control gate 316, as shownin FIG. 3. The charge-storage transistors 308 can be formed inaccordance with one or more of the various embodiments.

The charge-storage transistors 308 having their control gates 316coupled to an access line 302 typically share a common source depictedas array source 318. As shown in FIG. 3, the floating-gate transistors308 coupled to two adjacent access lines 302 may share the same arraysource 318. The charge-storage transistors 308 have their drains 312coupled to a local digit line 304. A column of the charge-storagetransistors 308 includes those transistors commonly coupled to a givenlocal digit line 304. A row of the charge-storage transistors 308includes those transistors commonly coupled to a given access line 302.

To reduce problems associated with high resistance levels, the arraysource 318, for example, may be regularly coupled to a metal or otherhighly conductive line to provide a low-resistance path to ground. Thearray ground 320 serves as this low-resistance path.

FIGS. 4A-4D are cross-sectional views at various process steps offormation of a memory cell 400 (depicted as 400A in FIG. 4C and 400B inFIG. 4D) in accordance with one or more embodiments of the disclosure. Agate stack can be formed on a semiconductor, such as substrate 410. Thegate stack includes a tunnel dielectric 420, a charge storage node 435,an inter-gate dielectric 450 over the charge storage node 435, and acontrol gate 460 over the inter-gate dielectric 450.

For one embodiment, the substrate 410 is a mono-crystalline siliconsubstrate 410. For a further embodiment, the substrate 410 is a p-typemono-crystalline silicon substrate 410. In still other embodiments, thesubstrate may include materials such as SIO2, SiON, an polysilicon.

The tunnel dielectric 420 (may also be referred to as a gate dielectric)is formed over an active region (also referred to herein as a channelregion) 415 of the substrate 410, over which memory cells will beformed. The gate dielectric 420 might be formed by thermal oxidation ofthe substrate 410. Alternatively, the gate dielectric 420 could beformed by a blanket deposition of a dielectric material, such as bychemical vapor deposition (CVD) or physical vapor deposition (PVD).

The gate dielectric 420 may comprise any suitable composition orcombination of compositions, and may, for example, include one or moreof silicon dioxide and various lanthanide oxides. As non-limitingexamples, the gate dielectric 420 may contain silicon oxide (SiO₂), butmay alternatively or additionally include high-K dielectrics such asHfO₂, ZrO₂, Al₂O₃, etc. High-K dielectrics are generally considered tobe dielectrics with a dielectric constant greater than that of SiO₂. Thetunnel dielectric material may be formed to an equivalent silicondioxide thickness of from about 1 nanometer to about 7 nanometers.

The charge storage node 435 can include a plurality of discrete islands430 of charge-trapping material. The charge storage node 435 may be oneor more layers capable of storing a charge indicative of a data state ofthe memory cell 400. The islands 430 are illustrated to compriseelectrically conductive material, such as metal, but in otherembodiments at least some of the islands 430 may comprisecharge-trapping dielectric material. The islands 430 may correspond tonanocrystals of nanoparticles (such as, for example, nanodots 430). Forthe most part, the islands 430 are referred to herein as nanodots 430and refer to discrete islands 430. As a non-limiting example, thenanodots 430 may have a size of about 15 angstroms and a relativespacing between nanodots 430 of about 15 angstroms. While illustratedwith the same size and spacing in FIGS. 4A-4D, the nanodots 430 may be avariety of sizes and have a variety of relative spacing. In someembodiments, the nanodots 430 may have maximal cross-sectionaldimensions of from about 1 nanometer to about 50 nanometers.Furthermore, while discrete islands are focused on in this description,the charge storage node 435 may comprise a semi-continuous or continuouslayer of a material such as, for example, Ruthenium.

These isolated nanodots 430 serve to store charge and can thuscollectively be thought of as a charge storage node 435 in a memorycell. For some embodiments, the nanocrystals contain a metal component.For example, the nanocrystals may be formed of conductive metal nitridesor metal oxides, such as conductive refractory metal nitrides orconductive refractory metal oxides. In one embodiment, the nanocrystalsare Ruthenium. As other examples, nanocrystals can be dopedsemiconductors (e.g., doped Ge or Si), metals (e.g., Ru, Re, Pt), metalnitrides (TiN, TaN), metal oxides (e.g., RuOx), metal alloys (e.g.,RuAl, RuTi), metal-alloy-nitrides (e.g., ternary nitrides like RuAlN,TaAlN), or ruthenium rare earth combination RuRe (e.g., Lanthanum).These nanocrystals may be formed by using specific precursors to controlthe nanocrystal density during ALD. However, other molecular structurescould be used in the charge storage node 435 provided the resultingnanocrystals serve as charge-storage sites within the bulk material.

While illustrated as a single layer of nanodots 430, those of ordinaryskill in the art will recognize that embodiments of the disclosure mayinclude charge storage nodes comprising multiple layers of nanodots 430separated by dielectric material.

In general, the nanocrystal structures are formed of conductivematerials over which a protective film 440 is formed, as is explainedmore fully below. As non-limiting examples, the protective film 440 maybe formed to coat, encase, or encapsulate the nanocrystal structures.

An inter-gate dielectric 450 (may also be referred to as a blockingdielectric) may be formed over the charge storage node 435 and includesa dielectric material. For one embodiment, the inter-gate dielectric 450contains silicon oxide (SiO₂), but may alternatively or additionallyinclude high-K dielectrics such as hafnium oxide (HfO₂), zirconium oxide(ZrO₂), aluminum oxide (Al₂O₃), aluminum hafnium oxide (AlHfOx), etc.

As non-limiting examples, the nanodots 430 may be formed by depositionof a thin film (specifically, a film of thickness of from about 1nanometer to about 1.2 nanometers) followed by e-beam evaporation, byco-sputtering metal with embedding insulator, by pulsed nucleationand/or by a templated self-assembly. As another non-limiting examples,the nanodots 430 may be formed by using atomic layer deposition (ALD)and halting the process before it forms a continuous layer (i.e., whilethe islands 430 are in a discontinuous form).

A control gate 460 is formed over the inter-gate dielectric 450. Thecontrol gate 460 is generally one or more layers of conductive material.As non-limiting examples, the control gate 460 may include aconductively-doped polysilicon or a metal-containing layer over apolysilicon layer (e.g., a refractory metal silicide layer formed on aconductively-doped polysilicon layer). The metals of chromium (Cr),cobalt (Co), hafnium (Hf), molybdenum (Mo), niobium (Nb), tantalum (Ta),titanium (Ti), tungsten (W), vanadium (V) and zirconium (Zr) aregenerally recognized as refractory metals. As other examples, thecontrol gate 460 may include multiple metal-containing layers, e.g., atitanium nitride (TiN) barrier layer over the inter-gate dielectric 450,a titanium (Ti) adhesion layer over the barrier layer and a tungsten (W)layer over the adhesion layer.

Source regions 490 and drain regions 490 are formed in or on thesubstrate 410 generally adjacent the gate dielectric 420. A channelregion 415 of the memory cell 400 is defined by the area of thesubstrate 410 between the source/drain regions 490. The source/drainregions 490 will generally have a conductivity type opposite theconductivity type of the substrate 410. For example, for a p-typesubstrate 410, the source/drain regions 490 might have an n+−typeconductivity.

In summary of FIGS. 4A-4D, in FIG. 4A, construction is shown at aprocessing stage in which tunnel dielectric 420 is formed across thesubstrate 410, and the nanodots 430 are formed over the tunneldielectric 420.

In FIG. 4B, a protective film 440 is formed over the nanodots 430 andthe dielectric material 420, as is explained below.

In FIG. 4C, inter-gate dielectric 450 is formed over the nanodots 430and protective film 440, and the control gate 460 is formed over theinter-gate dielectric 450.

In FIG. 4D, inter-gate dielectric 450 is formed as multiple layers 452,454, and 456 over the nanodots 430 and protective film 440, as explainedmore fully below. The control gate 460 is formed over the inter-gatedielectric 450.

The gate stack may be patterned to define access lines (i.e., wordlines) of a memory device. It is noted that additional layers may formthe gate stack, such as barrier layers to inhibit diffusion betweenopposing layers or adhesion layers to promote adhesion between opposinglayers. Sidewall spacers may be formed on the sidewalls of the gatestacks to protect and insulate the sidewalls.

In one or more embodiments of the present invention, the nanodots 430may need to be protected from the formation of the inter-gate dielectric450. For example, the nanodots 430 may be formed as ruthenium nanodots430 and the inter-gate dielectric 450 may be formed of high-k dielectricformed with an ALD process including O₃ as one of the precursors (alsoreferred to herein as O₃-based high-k dielectric). As a non-limitingexample, the O₃-based high-k dielectric may be HfSiOx. O₃-based high-kdielectric formation may react with the ruthenium nanodots 430 to formruthenium tetroxide (RuO4), which can be very volatile. As a result,this process may completely or partially vaporize the nanodots 430,which may eliminate too many nanodots 430, make the nanodots 430 toosmall, or completely remove the nanodots 430.

To fortify the ruthenium nanodots 430, or other nanodot materialssusceptible to a damaging reaction with O₃-based high-k dielectricformation, the protective film 440 may be formed over the nanodots 430.

In some embodiments, the protective film 440 may be formed by subjectingthe ruthenium nanodots 430 to an O₂ presoak at a high temperature, suchas, for example, about 600° C. Exposure to O₂ at a high temperature willform ruthenium dioxide (RuO₂), which is more stable than the volatileRuO₄. After the oxidation with O₂, the protective film 440 will includeRuO₂ as a coating of ruthenium dioxide for the ruthenium nanodots 430.The RuO₂ coating is not as reactive with O₃-based high-k dielectricformation and fortifies the ruthenium nanodots 430 against subsequentharmful reactions with O₃. In other embodiments, the nanodots may beformed of materials such as RuHf and RuSi, which are then subjected tothe O₂ presoak at a high temperature.

In some embodiments, the nanodots may be formed with an alloy ofruthenium and another material such as, for example, strontium. A SrRualloy may be less susceptible to damage and vaporization from theformation of O₃-based high-k dielectrics. The alloyed nanodots may beformed through cosputter PVD, PVD from a SrRu target, concurrent PVD ofRu and Sr, a CVD process, or other process to deposit both Sr and Ru onthe surface for formation of nanodots. In addition, the SrRu nanodotsmay be oxidized to create SrRuO₃, which may be even less susceptible todamage and vaporization from the formation of O₃-based high-kdielectrics. As another non-limiting example, RuSr may formed withconsecutive PVD of Ru and then Sr.

In other embodiments, rather than forming a protective film, theruthenium nanodots 430 may be formed with a larger size, increaseddensity, or a combination thereof prior to formation of the O₃-basedhigh-k dielectric.

FIGS. 5A-5B are simplified plan views of nanodots 430 of a chargestorage node 435 before and after, respectively, a process of forminghigh-k dielectric material over the nanodots 430. In FIG. 5A theruthenium nanodots 430A are shown with an increased density on the gatedielectric 420 to create an overabundance of nanodots 430A relative to adesired nanodot density. When exposed to the formation of high-kdielectric material some of these nanodots may vaporize or reduce insize. In FIG. 5B the ruthenium nanodots 430B are shown with a desirednanodot density on the gate dielectric 420 after some of the rutheniumnanodots 430A have vaporized. As a non-limiting example a desirednanodot density may be about 5E12/cm².

In other embodiments, the protective film 440 may be formed by an ALDprocess using a water-based high-K dielectric. The ALD process includesan alternating series of self-limiting chemical reactions, calledhalf-reactions, between gas-phase precursors and a substrate. Theprecursors are pulsed into the reactor in a sequential fashion, withpurging of precursors in between. A series of thesepulse/purge/pulse/purge cycles are used to form a continuous layer ofmaterial.

FIGS. 6A-6D depict conceptually an atomic layer deposition process. Thediscussion of 6A-6D is a generic description that may apply to formingmany of the layers described herein, such as, for example, the tunneldielectric 420, the charge storage node 435, the protective film 440 andhigh-k dielectric layers. Note that no attempt has been made torepresent specific molecular structures. However, the concepts of ALD asthey relate to the present disclosure will be aided by FIGS. 6A-6D.Reference may be made to all of FIGS. 6A-6D when individually describingeach of FIGS. 6A-6D.

In ALD, gaseous precursors are introduced one at a time to the substratesurface mounted within a reactor (e.g., a reaction chamber). Thisintroduction of the gaseous precursors takes the form of sequentialpulses of each gaseous precursor. In a pulse of a precursor gas, theprecursor gas is made to flow into a specific area or region for a shortperiod of time. Between the pulses, the reaction chamber is purged witha gas (e.g., an inert gas), evacuated, or a combination thereof. Thefirst precursor material to be introduced may be called the precursor,and the next material introduced may be called the reactant, but bothmaterials are precursors to the eventual material formed by the ALDreaction, and thus both will be referred to herein as precursors.

In FIG. 6A, a first precursor 645 is introduced into the reactor and aportion is chemisorbed at a surface of the substrate 410 during thefirst pulsing phase. Typically, the first precursor 645 is chemisorbedat an adsorption site 650 of the surface, such as absorbed hydroxylsites resulting from exposure of the substrate 410 to water vapor.However, the surface treatment for creation of adsorption sites 650 willbe dependent upon the chosen precursors. The reactor is then purged orevacuated to remove excess first precursor 645 (i.e., the firstprecursor 645 that has not been chemisorbed onto the adsorption sites650) and reaction products 655.

As shown in FIG. 6B, the chemisorbed first precursor 645 results inreaction sites 660 for a subsequent phase of the ALD process. Thespacing “d” represents the minimum distance between adjacent moleculesof the first precursor controlled by the steric hindrance of thosemolecules. Thus, larger molecules may not be able to make use of eachpotential adsorption site 650. In the usual application of the ALDprocesses, the spacing d is desired to be close to the inter-atomicspacing of the deposited film, thereby enabling surface saturation whichleads to an ideal 2-dimensional layer-by-layer growth. Therefore in theusual instances of the ALD application, large precursors are undesirabledue to the resulting non-planarity and slow rate of growth. In somelayers (e.g., the charge storage node 435), the choice of larger-sizedprecursors, in conjunction with proper substrate treatment to provideadsorption sites 650 suitable for the chosen precursor, would exploitthis “non-ideality” of the larger precursor sizes to help facilitate adesirable 3-dimensional growth of nanometer-sized “islands.” However,regardless of the molecular size of the precursors, imperfections of thesurface of the substrate 410 may also produce discontinuities in theresulting layer. Typical ALD processing overcomes these imperfections byperforming multiple cycles until a continuous layer is formed, ifdesired.

In FIG. 6C, a second precursor 665 is introduced into the reactor and aportion reacts with the first precursor 645 at the reaction sites 660during the second pulsing phase. The reactor is then purged or evacuatedto remove excess second precursor 665 (i.e., the second precursor 665that has not reacted with the first precursor 645 at reaction sites 660)and reaction products 670.

As shown in FIG. 6D, following the reaction of the second precursor 665with the first precursor 645 at the reaction sites 660, adsorption sites675 are formed for chemisorbing additional first precursor 645 in asubsequent cycle of the ALD process. A number of cycles of the phases ofFIGS. 6A-6D can be performed. However, in accordance with someembodiments of the disclosure, and related to the formation of thecharge storing node, the number of cycles may be limited to a numberthat does not result in a continuous film.

FIG. 7 is a simplified flow diagram showing a process 700 with actsinvolved in forming a protective film 440 over nanodots 430. Whendiscussing FIG. 7, reference will also be made to FIGS. 4A-4D. Theprotective film 440 may include a number of water-based materials, suchas, for example, HfOx, ALOx, ZrOx. As other non-limiting examples, theprotective film 440 may include ALD formed to include one or more of thedielectrics SiN, Si02, dielectrics formed with hydrogen peroxidesolutions, dielectrics formed with ammonia solutions, and dielectricsformed with generated water (H2/O2 mixtures) systems. For simplicity ofexplanation, and not limitation, the discussion of FIG. 7 will focus ona water-based formation of HfSiOx as the protective film 440. With thediscussion of FIG. 7, and an understanding of ALD processes, those ofordinary skill in the art will understand the formation of otherprotective films. Some example materials for other protective filmsinclude metal-alloys, metal-alloy suboxides, and metal-alloy oxides,such as, RuSi, RuSiOx, RuSiO₄, RuHf, RuHfOx, and RuHfO₄.

In operation 702, the substrate 410 is prepared for the ALD process. Forthe case of forming the protective film 440, the substrate would includethe gate dielectric 420 and nanodots 430. In some embodiments, thesubstrate 440 may include Hf, Si, or H₂O at the beginning of theprocess. Furthermore, while the discussion starts with a hafniumprecursor, in other embodiments the process may begin with, for example,silicon.

In operation 712 a hafnium precursor is pulsed into the reaction chamberto form a layer over the substrate 410. In operation 714, the hafniumprecursor is purged from the reaction chamber.

In operation 722 an intermediate precursor (e.g., H₂O) is pulsed intothe reaction chamber to form a layer over the substrate 410. Inoperation 724, the intermediate precursor is purged from the reactionchamber.

In operation 732 a silicon containing precursor is pulsed into thereaction chamber to form a layer over the substrate 410. In operation734, the silicon containing precursor is purged from the reactionchamber.

In operation 742 the intermediate precursor is pulsed into the reactionchamber to form a layer over the substrate 410. In operation 744, theintermediate precursor is purged from the reaction chamber.

Decision block 750 determines if more ALD cycles should be applied toachieve a desired thickness for the protective film 440. For example,for HfSiOx using water as the oxidizer, the protective film may have anominal thickness of about 6 angstroms, which may amount to about 8cycles of the ALD process. For HfSiOx, the protective film may have arange of about 2 to 10 angstroms.

The protective film 440 may not have dielectric characteristics that areas desirable as those of O₃-based high-k dielectrics. Therefore, theprotective film 440 may be very thin so that better O₃-based high-kdielectrics may be applied over the protective film 440. On the otherhand, the protective film 440 should be thick enough to fortify thenanodots 430 against vaporization or damage due to the O₃-based high-kdielectrics.

If the desired thickness for the protective film 440 has not beenreached, the process continues with another cycle of ALD. If the desiredthickness for the protective film 440 has been reached, the processends.

In general, the process 700 describes formation of HfSiOx in aone-to-one ratio. However, other ratios may be formed, such as, forexample, a Hf-rich ratio. The dashed lines after each of the purgeoperations (714, 724, and 734) indicate that the process 700 may loopback at these point to create ratios different from one-to-one. Afterformation of the protective film, the inter-gate dielectric 450 may befofined. Furthermore, these H2Od 2O based interface layers may be ofrelatively low quality and grown at low temperatures, down to roomtemperature. Subsequently, before forming the rest of the dielectric,the quality of the H₂O based interface layers may be improved throughany number of processes, such as, for example, high temperature annealand plasma induced nitridation. Other suitable treatments to improve theoxygen diffusion barrier effectiveness of the H₂O based interface layersmay include incorporating other oxidants such as Fluorine.

FIG. 8 is a simplified flow diagram showing a process 800 with actsinvolved in forming the inter-gate dielectric 450 including high-kdielectric material.

When discussing FIG. 8, reference will also be made to FIGS. 4A-4D. Theinter-gate dielectric 450 may include a number of high-k dielectricmaterials, such as, for example, one or more of zirconium oxide (ZrO),silicon aluminum oxynitride (SiAlON), aluminum hafnium oxynitride(AlHfON), silicon tantalum oxynitride (SiTaON), aluminum tantalumoxynitride (AlTaON), zirconium silicon oxynitride (ZrSiON), lanthanidesilicon oxynitride (for instance, LaSiON), and lanthanide aluminumoxynitride (for instance, LaAlON). The chemical formulas are shown toillustrate the elements comprised by the compounds, rather than toillustrate stoichiometric relationships of the elements.

In operation 802, the substrate 410 is prepared for the ALD process. Forthe case of forming the inter-gate dielectric 450, the substrate couldinclude the gate dielectric 420, the nanodots 430, and, if present, theprotective film 430.

In operation 850A, a first O₃-based high-k dielectric is formed.Operations 850A and 850B are generically illustrated as process 850.Process 850 begins with operation 852.

In operation 852 a hafnium precursor is pulsed into the reaction chamberto form a layer over the substrate 410. In operation 854, the hafniumprecursor is purged from the reaction chamber.

In operation 862 an oxygen containing precursor (e.g., O₃) is pulsedinto the reaction chamber to form a layer over the substrate 410. Inoperation 864, the oxygen containing precursor is purged from thereaction chamber.

In operation 872 a silicon containing precursor is pulsed into thereaction chamber to form a layer over the substrate 410. In operation874, the silicon containing precursor is purged from the reactionchamber.

In operation 882 the oxygen containing precursor is pulsed into thereaction chamber to form a layer over the substrate 410. In operation884, the oxygen containing precursor is purged from the reactionchamber.

Decision block 890 determines if more ALD cycles should be applied toachieve a desired thickness for the O₃-based high-k dielectric. As anexample, when the inter-gate dielectric 450 includes the first O₃-basedhigh-k dielectric, an intermediate dielectric, and a second O₃-basedhigh-k dielectric, a desired thickness for the first O₃-based high-kdielectric may have a nominal thickness of about 60 angstroms and arange of about 10 to 100 angstroms.

If the desired thickness for the O₃-based high-k dielectric has not beenreached the process continues with another cycle of ALD. If the desiredthickness for the O₃-based high-k dielectric has been reached, process850 ends and control returns to process 800.

In some embodiments, only some of the inter-gate dielectric 450 ishigh-k dielectric material, and the remaining dielectric material mayinclude any suitable dielectric composition, such as silicon dioxide. Inother embodiments the inter-gate dielectric 450 may include only high-kdielectric material. Thus, the inter-gate dielectric 450 may be a singlematerial as illustrated in FIG. 4C, two layers including high-kdielectric material and an intermediate dielectric (not shown), or threelayers including the first O₃-based high-k dielectric, the intermediatedielectric, and the second O₃-based high-k dielectric.

If an intermediate dielectric is desired, operation 820 is performed toform this intermediate layer on the first high-k dielectric. A desiredthickness for the intermediate dielectric may have a nominal thicknessof about 80 angstroms and a range of about 40 to 150 angstroms

If a second high-k dielectric is desired, operation 850B is performed,which repeats process 850 to form the second high-k dielectric. Adesired thickness for the second O₃-based high-k dielectric may have anominal thickness of about 60 angstroms and a range of about 10 to 100angstroms.

CONCLUSION

Embodiments of the present invention may include devices and methods offorming the devices that include fortified nanodots protected fromdamage, vaporization, or a combination thereof due to high-k dielectricsformed over the nanodots.

In some embodiments, a method of forming a floating gate includesforming a dielectric over a semiconductor and forming nanodots overportions of the dielectric to develop charge trap regions where thenanodots are formed. The nanodots are encased with a protective filmcomprising a water-based dielectric formed over the nanodots and thedielectric. A high-k dielectric is formed over the protective film.

In other embodiments, a method of forming a charge trap memory cellincludes forming a tunnel oxide over a substrate. Floating charge-trapgates are formed over the tunnel oxide by forming nanodots on the tunneloxide and forming a thin film of a protection layer over the nanodotsand the tunnel oxide. An inter-gate dielectric, which includes anO₃-based high-k dielectric, is formed over the protection layer and acontrol gate is formed over the inter-gate dielectric and the floatingcharge-trap gates.

In other embodiments, a method of forming a charge trap region includesforming a dielectric and forming ruthenium nanodots on the dielectric.The ruthenium nanodots are oxidized at a temperature above about 600° C.to form a coating of ruthenium dioxide on the ruthenium nanodots. AnO₃-based high-k dielectric is formed over the coating of rutheniumdioxide and the dielectric.

In yet other embodiments, a method of forming a floating gate includesforming a dielectric over a semiconductor and forming ruthenium nanodotson the dielectric. The ruthenium nanodots are doped with an additionalmaterial to form a ruthenium alloy at least on a surface of theruthenium nanodots and an O₃-based high-k dielectric is formed over theruthenium nanodots and the dielectric.

In yet other embodiments, a method of forming a floating gate includesforming a dielectric over a semiconductor and forming an overabundanceof ruthenium nanodots on the dielectric at a nanodot density that ishigher than a desired nanodot density. An O₃-based high-k dielectric isformed over the overabundance of the ruthenium nanodots and some of theruthenium nanodots vaporize during the formation of the O₃-based high-kdielectric to produce the desired nanodot density.

In yet other embodiments, a memory device includes an array of memorycells. At least one of the memory cells includes a tunnel dielectric, acharge storage node comprising nanodots over the tunnel dielectric, anda protective film over the nanodots. The at least one memory cell alsoincludes an inter-gate dielectric over the protective film and a controlgate over the inter-gate dielectric. The protective film is configuredto protect at least some of the nanodots from vaporizing duringformation of the inter-gate dielectric.

In yet other embodiments, a memory device includes an array of memorycells. At least one of the memory cells includes a tunnel dielectric anda charge storage node including nanodots over the tunnel dielectric,wherein the nanodots comprise an alloy of ruthenium and strontium. Theat least one memory cell also includes an inter-gate dielectric over thecharge storage node and a control gate over the inter-gate dielectric.The alloy of ruthenium and strontium is configured to protect at leastsome of the nanodots from vaporizing during formation of the inter-gatedielectric.

Although the present invention has been described with reference toparticular embodiments, the present invention is not limited to thesedescribed embodiments. Rather, the present invention is limited only bythe appended claims and their legal equivalents.

1. A method of forming a memory cell, comprising: forming a dielectricover a semiconductor; forming an island of charge-trapping material overthe dielectric; forming a protective film comprising a dielectric overthe island; and forming a high-k dielectric over the protective film. 2.The method of claim 1, wherein forming an island of charge-trappingmaterial comprises forming an island of electrically conductivematerial.
 3. The method of claim 2, wherein foaming an island ofelectrically conductive material comprises forming nanocrystals ofnanoparticles, forming nanocrystals of nanoparticles comprises formingnanodots, forming nanodots comprises forming nanodots containing a metalcomponent, forming nanodots containing a metal component comprisesforming nanodots formed of at least one of conductive metal nitrides,metal oxides, metals, metal alloys, or metal-alloy-nitrdes.
 4. Themethod of claim 1, wherein forming the protective film comprisesoxidizing the island.
 5. The method of claim 4, wherein oxidizing theisland comprises subjecting the island to an O2 presoak at a hightemperature.
 6. The method of claim 1, wherein forming the protectivefilm comprises an atomic layer deposition process to include one or moreof the dielectrics SiN, SiO2, dielectrics formed with hydrogen peroxidesolutions, dielectrics foamed with ammonia solutions, and dielectricsformed with generated water systems.
 7. The method of claim 1, whereinforming the protective film comprises foliiiing a water-baseddielectric.
 8. The method of claim 1, further comprising forming theisland of at least one of ruthenium, rhenium, rhodium, platinum,titanium nitride, tantalum nitride, ruthenium oxide, ruthenium hafnium,ruthenium silicon, ruthenium aluminum alloy, ruthenium titanium alloy,ruthenium aluminum nitride, tantalum aluminum nitride, or strontiumruthenium alloy.
 9. The method of claim 1, wherein the island is formedusing a chemical vapor deposition process, a physical vapor depositionprocess or an atomic layer deposition process.
 10. The method of claim1, wherein the protective film formed using an atomic layer depositionprocess, comprising: performing an atomic layer deposition cycle,comprising: introducing a hafnium containing precursor into a reactorcontaining the semiconductor; introducing a water-based precursor intothe reactor; introducing a silicon containing precursor into thereactor; and introducing the water-based precursor into the reactor;wherein each precursor is independently introduced and the reactor ispurged, evacuated, or a combination thereof between each introduction ofthe precursors; and repeating the performing the atomic layer depositioncycle to form a desired thickness for the protective film if necessary.11. The method of claim 10, wherein repeating the performing the atomiclayer deposition cycle comprises forming the protective film to adesired thickness of between about 2 angstroms and about 10 angstroms.12. The method of claim 10, wherein repeating the performing the atomiclayer deposition cycle comprises forming the protective film to adesired thickness of about 6 angstroms.
 13. The method of claim 10,further comprising treating the protective film after the repeating witha high temperature anneal, a nitdridation process, a process to improvean oxygen diffusion barrier property of the protective film, or aprocess to improve a charge leakage barrier property of the protectivefilm.
 14. The method of claim 1, wherein the protective film comprisesRuO₂, SrRu, SrO, or SrRuO₃.
 15. The method of claim 1, wherein thehigh-k dielectric comprises an O₃-based high-k dielectric.
 16. Themethod of claim 1, wherein the high-k dielectric comprises ZrO, SiAlON,AlHfON, SiTaON, AlTaON, ZrSiON, LaSiON, and LaAlON.
 17. The method ofclaim 1, wherein forming the high-k dielectric comprises: forming afirst high-K layer using an atomic layer deposition process, comprising:performing an atomic layer deposition cycle, comprising: introducing ahafnium containing precursor into a reactor containing thesemiconductor; introducing an oxygen containing precursor into thereactor; introducing a silicon containing precursor into the reactor;and introducing the oxygen containing precursor into the reactor;wherein each precursor is independently introduced and the reactor ispurged, evacuated, or a combination thereof between each pulsing of theprecursors; and repeating the performing the atomic layer depositioncycle to form a first desired thickness.
 18. The method of claim 17,further comprising: forming an intermediate dielectric over the firsthigh-K layer; and forming a second high-K layer over the intermediatedielectric layer by repeating the performing the atomic layer depositioncycle to form a second desired thickness.
 19. The method of claim 17,wherein: forming the first high-K layer comprises forming the firsthigh-K layer to a thickness between about 10 angstroms and about 100angstroms; forming the intermediate dielectric comprises forming theintermediate dielectric to a thickness between about 40 angstroms andabout 150 angstroms; forming the second high-K layer comprises formingthe second high-K layer to a thickness between about 40 angstroms andabout 100 angstroms.
 20. The method of claim 17, wherein: forming thefirst high-K layer comprises forming the first high-K layer to athickness of about 60 angstroms; forming the intermediate dielectriccomprises forming the intemiediate dielectric to a thickness of about 80angstroms; forming the second high-K layer comprises forming the secondhigh-K layer to a thickness of about 60 angstroms.
 21. A method offorming a memory cell, comprising: forming a tunnel dielectric over asubstrate; forming a charge storage node over the tunnel dielectric by:forming nanodots over the tunnel dielectric; and forming a protectionfilm over the nanodots; forming an O₃-based high-k inter-gate dielectricover the protection film; and forming a control gate over the inter-gatedielectric.
 22. The method of claim 21, further comprising forming thenanodots to comprise at least one of ruthenium, rhenium, rhodium,platinum, titanium nitride, tantalum nitride, ruthenium oxide, rutheniumaluminum alloy, ruthenium titanium alloy, ruthenium aluminum nitride,tantalum aluminum nitride, or ruthenium rare earth.
 23. The method ofclaim 21, wherein the nanodots are formed using a chemical vapordeposition process, a physical vapor deposition process or an atomiclayer deposition process.
 24. The method of claim 21, wherein theforming the inter-gate dielectric, comprises; forming a first O₃-basedhigh-k dielectric over the protection film; forming an intermediatedielectric over the first O₃-based high-k dielectric; and forming asecond O₃-based high-k dielectric over the intermediate dielectric;wherein the control gate is formed over the second O₃-based high-kdielectric.
 25. The method of claim 21, wherein the forming theprotection film comprises an atomic layer deposition process,comprising: performing an atomic layer deposition cycle, comprising:introducing a hafnium containing precursor into a reactor containing asemiconductor including the charge trap memory cell; introducing awater-based precursor into the reactor; introducing a silicon containingprecursor into the reactor; and introducing the water-based precursorinto the reactor; wherein each precursor is independently introduced andthe reactor is purged, evacuated, or a combination thereof between eachintroduction of the precursors; and repeating the performing the atomiclayer deposition cycle to form a desired thickness for the protectionfilm if necessary.
 26. A method of forming a charge storage node,comprising: forming a dielectric; forming ruthenium nanodots over thedielectric; oxidizing the ruthenium nanodots at a temperature aboveabout 600° C. to form a film of ruthenium dioxide over the rutheniumnanodots; and forming an O₃-based high-k dielectric over the film ofruthenium dioxide.
 27. The method of claim 26, wherein the forming theO₃-based high-k dielectric comprises: fonning a first high-K layer usingan atomic layer deposition process, comprising: performing an atomiclayer deposition cycle, comprising: introducing a hafnium containingprecursor into a reactor containing a semiconductor including the chargestorage node; introducing an oxygen containing precursor into thereactor; introducing a silicon containing precursor into the reactor;and introducing the oxygen containing precursor into the reactor;wherein each precursor is independently introduced and the reactor ispurged, evacuated, or a combination thereof between each introduction ofthe precursors; and repeating the performing the atomic layer depositioncycle to form a desired thickness for the O₃-based high-k dielectric ifnecessary.
 28. A method of forming a charge storage node, comprising:forming a dielectric over a semiconductor; forming ruthenium nanodotsover the dielectric; doping the ruthenium nanodots with an additionalmaterial to form a ruthenium alloy at least on a surface of theruthenium nanodots; and forming an O₃-based high-k dielectric over theruthenium nanodots.
 29. The method of claim 28, wherein the forming theruthenium nanodots and the doping the ruthenium nanodots comprisescombining ruthenium and strontium to form SrRu alloyed nanodots.
 30. Themethod of claim 29, further comprising oxidizing the SrRu alloyednanodots.
 31. The method of forming a layer of claim 28, wherein thefouiiing the ruthenium nanodots and the doping the ruthenium nanodotscomprises a process selected from the group consisting of a CVD processincluding Ru and Sr, cosputter PVD of Ru and Sr, PVD from a SrRu target,concurrent PVD of Ru and Sr, and consecutive PVD of Ru and Sr.
 32. Amethod of forming a charge storage node, comprising: fonning adielectric over a semiconductor; foiming an overabundance of rutheniumnanodots over the dielectric at a nanodot density that is higher than adesired nanodot density; and forming an O₃-based high-k dielectric overthe overabundance of the ruthenium nanodots; wherein some of theruthenium nanodots vaporize, reduce in size, or a combination thereofduring the forming the O₃-based high-k dielectric to produce the desirednanodot density.
 33. The method of claim 32, further comprising formingan O₃-based protective film over the ruthenium nanodots prior to theforming the O₃-based high-k dielectric.
 34. The method of claim 32,wherein the desired nanodot density of about 5E12/cm².
 35. A method offorming a charge storage node, comprising: fowling a dielectric over asemiconductor; forming an overabundance of ruthenium nanodots over thedielectric at a nanodot size that is higher than a desired nanodot size;and forming an O₃-based high-k dielectric over the overabundance of theruthenium nanodots; wherein some of the ruthenium nanodots vaporize,reduce in size, or a combination thereof during the forming the O₃-basedhigh-k dielectric to produce the desired nanodot size.
 36. A memorydevice, comprising: an array of memory cells, wherein at least one ofthe memory cells comprises: a tunnel dielectric; a charge storage nodecomprising nanodots over the tunnel dielectric; a protective film overthe nanodots; an inter-gate dielectric over the protective film; and acontrol gate over the inter-gate dielectric; wherein the protective filmis configured to protect at least some of the nanodots from vaporizingduring formation of the inter-gate dielectric.
 37. The memory device ofclaim 36, wherein the nanodots comprise ruthenium and the protectivefilm comprises a water-based high-k dielectric.
 38. The memory device ofclaim 36, wherein the nanodots comprise ruthenium and the protectivefilm comprises ruthenium dioxide.
 39. The memory device of claim 36,wherein the nanodots comprise ruthenium and the protective film includesat least one of SiN, SiO₂, a dielectric formed with a hydrogen peroxide,and a dielectric formed with an ammonia solution.
 40. The memory deviceof claim 36, wherein the inter-gate dielectric comprises an O₃-basedhigh-k dielectric.
 41. The memory device of claim 40, wherein theprotective film comprises a water-based high-k dielectric.
 42. Thememory device of claim 36, wherein the inter-gate dielectric comprises;a first O₃-based high-k dielectric over the protective film; anintermediate dielectric over the first O₃-based high-k dielectric; and asecond O₃-based high-k dielectric over the intermediate dielectric. 43.The memory device of claim 42, wherein the nanodots comprise rutheniumand the protective film comprises a water-based high-k dielectric. 44.The memory device of claim 36, wherein a thickness of the protectivefilm is about 6 angstroms.
 45. The memory device of claim 36, whereinthe memory device is operably coupled to a memory access device as partof an electronic system.
 46. A memory device, comprising: an array ofmemory cells, wherein at least one of the memory cells comprises: atunnel dielectric; a charge storage node comprising nanodots over thetunnel dielectric, wherein the nanodots comprise an alloy of rutheniumand strontium; an inter-gate dielectric over the charge storage node;and a control gate over the inter-gate dielectric; wherein the alloy ofruthenium and strontium is configured to protect at least some of thenanodots from vaporizing during formation of the inter-gate dielectric.47. The memory device of claim 46, wherein the inter-gate dielectriccomprises an O₃-based high-k dielectric.
 48. The memory device of claim46, wherein the nanodots comprise an oxidized alloy of ruthenium andstrontium.
 49. The memory device of claim 46, wherein the memory deviceis operably coupled to a memory access device as part of an electronicsystem.